BSZ060NE2LS IC Chip New Original Integrated Circuit With High Quality At Best Price
Product Attributes
| TYPE | DESCRIPTION |
| Category | Discrete Semiconductor ProductsTransistors – FETs, MOSFETs – Single |
| Mfr | Infineon Technologies |
| Series | OptiMOS™ |
| Package | Tape & Reel (TR)Cut Tape (CT)
Digi-Reel® |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25 V |
| Current – Continuous Drain (Id) @ 25°C | 12A (Ta), 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 9.1 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 12 V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 26W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TSDSON-8-FL |
| Package / Case | 8-PowerTDFN |
| Base Product Number | BSZ060 |
Documents & Media
| RESOURCE TYPE | LINK |
| Datasheets | BSZ060NE2LS |
| Other Related Documents | Part Number Guide |
| Featured Product | Data Processing Systems |
| EDA Models | BSZ060NE2LSATMA1 by Ultra LibrarianBSZ060NE2LS by SnapEDA |
| Simulation Models | MOSFET OptiMOS™ 25V N-Channel Spice Model |
Environmental & Export Classifications
| ATTRIBUTE | DESCRIPTION |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
Additional Resources
| ATTRIBUTE | DESCRIPTION |
| Other Names | BSZ060NE2LSBSZ060NE2LS-ND
BSZ060NE2LSATMA1CT BSZ060NE2LSDKR-ND SP000776122 BSZ060NE2LSCT-ND BSZ060NE2LSTR-ND BSZ060NE2LSATMA1DKR BSZ060NE2LSDKR BSZ060NE2LSATMA1TR BSZ060NE2LSCT |
| Standard Package | 5,000 |
A transistor is a semiconductor device that is commonly used in amplifiers or electronically controlled switches. Transistors are the basic building blocks that regulate the operation of computers, mobile phones, and all other modern electronic circuits.
Due to their fast response speed and high accuracy, transistors can be used for a wide variety of digital and analog functions, including amplification, switching, voltage regulator, signal modulation and oscillator. Transistors can be packaged individually or in a very small area that can hold 100 million or more transistors as part of an integrated circuit.
Compared with the electron tube, the transistor has many advantages:
1.Component has no consumption
No matter how good the tube is, it will gradually deteriorate due to changes in cathode atoms and chronic air leakage. For technical reasons, transistors had the same problem when they were first made. With advances in materials and improvements in many aspects, transistors typically last 100 to 1,000 times longer than electronic tubes.
2.Consume very little power
It is only one tenth or tens of one of the electron tube. It does not need to heat the filament to produce free electrons like the electron tube. A transistor radio only needs a few dry batteries to listen for six months a year, which is difficult to do for tube radio.
3.No need to preheat
Work as soon as you turn it on. For example, a transistor radio goes off as soon as it is turned on, and a transistor television sets up a picture as soon as it is turned on. Vacuum tube equipment can’t do that. After the boot, wait for a while to hear the sound, see the picture. Clearly, in military, measurement, recording, etc., transistors are very advantageous.
4.Strong and reliable
100 times more reliable than the electron tube, shock resistance, vibration resistance, which is incomparable to the electron tube. In addition, the size of the transistor is only one-tenth to one-hundredth of the size of the electron tube, very little heat release, can be used to design small, complex, reliable circuits. Although the manufacturing process of transistor is precise, the process is simple, which is conducive to improving the installation density of components.
