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XCKU060-2FFVA1156I 100% New & Original DC To DC Converter & Switching Regulator Chip

short description:

The -1L devices can operate at either of two VCCINT voltages, 0.95V and 0.90V and are screened for lower maximum static power. When operated at VCCINT = 0.95V, the speed specification of a -1L device is the same as the -1 speed grade. When operated at VCCINT = 0.90V, the -1L performance and static and dynamic power is reduced.DC and AC characteristics are specified in commercial, extended, industrial, and military temperature ranges. 


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Product Attributes

TYPE ILLUSTRATE
category Field Programmable Gate Arrays (FPGAs)
manufacturer AMD
series Kintex® UltraScale™
wrap bulk
Product status Active
DigiKey is programmable Not verified
LAB/CLB number 41460
Number of logic elements/units 725550
Total number of RAM bits 38912000
Number of I/Os 520
Voltage - Power supply 0.922V ~ 0.979V
Installation type Surface adhesive type
Operating temperature -40°C ~ 100°C (TJ)
Package/Housing 1156-BBGA、FCBGA
Vendor component encapsulation 1156-FCBGA (35x35)
Product master number XCKU060

Integrated Circuit Type

Compared with electrons, photons have no static mass, weak interaction, strong anti-interference ability, and are more suitable for information transmission.  Optical interconnection is expected to become the core technology to break through the power consumption wall, storage wall and communication wall.  Illuminant, coupler, modulator, waveguide devices are integrated into the high density optical features such as photoelectric integrated micro system, can realize quality, volume, power consumption of high density photoelectric integration, photoelectric integration platform including III - V compound semiconductor monolithic integrated (INP) passive integration platform, silicate or glass (planar optical waveguide,  PLC) platform and silicon-based platform.  

InP platform is mainly used for the production of laser, modulator, detector and other active devices, low technology level, high substrate cost;  Using PLC platform to produce passive components, low loss, large volume;  The biggest problem with both platforms is that the materials are not compatible with silicon-based electronics.  The most prominent advantage of silicon-based photonic integration is that the process is compatible with CMOS process and the production cost is low, so it is considered to be the most potential optoelectronic and even all-optical integration scheme

There are two integration methods for silicon-based photonic devices and CMOS circuits.

The advantage of the former is that the photonic devices and electronic devices can be optimized separately, but the subsequent packaging is difficult and commercial applications are limited. The latter is difficult to design and process integration of the two devices.  At present, hybrid assembly based on nuclear particle integration is the best choice  


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