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XCZU19EG-2FFVC1760E 100% New & Original DC To DC Converter & Switching Regulator Chip

short description:

This family of products integrates a feature-rich 64-bit quad-core or dual-core Arm® Cortex®-A53 and dual-core Arm Cortex-R5F based processing system (PS) and programmable logic (PL) UltraScale architecture in a single device. Also included are on-chip memory, multiport external memory interfaces,  and a rich set of peripheral connectivity interfaces.


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Product Attributes

Product Attribute Attribute Value
Manufacturer: Xilinx
Product Category: SoC FPGA
Shipping Restrictions:  This product may require additional documentation to export from the United States.
RoHS:  Details
Mounting Style: SMD/SMT
Package / Case: FBGA-1760
Core: ARM Cortex A53, ARM Cortex R5, ARM Mali-400 MP2
Number of Cores: 7 Core
Maximum Clock Frequency: 600 MHz, 667 MHz, 1.5 GHz
L1 Cache Instruction Memory: 2 x 32 kB, 4 x 32 kB
L1 Cache Data Memory: 2 x 32 kB, 4 x 32 kB
Program Memory Size: -
Data RAM Size: -
Number of Logic Elements: 1143450 LE
Adaptive Logic Modules - ALMs: 65340 ALM
Embedded Memory: 34.6 Mbit
Operating Supply Voltage: 850 mV
Minimum Operating Temperature: 0 C
Maximum Operating Temperature: + 100 C
Brand: Xilinx
Distributed RAM: 9.8 Mbit
Embedded Block RAM - EBR: 34.6 Mbit
Moisture Sensitive: Yes
Number of Logic Array Blocks - LABs: 65340 LAB
Number of Transceivers: 72 Transceiver
Product Type: SoC FPGA
Series: XCZU19EG
Factory Pack Quantity: 1
Subcategory: SOC - Systems on a Chip
Tradename: Zynq UltraScale+

Integrated Circuit Type

Compared with electrons, photons have no static mass, weak interaction, strong anti-interference ability, and are more suitable for information transmission.  Optical interconnection is expected to become the core technology to break through the power consumption wall, storage wall and communication wall.  Illuminant, coupler, modulator, waveguide devices are integrated into the high density optical features such as photoelectric integrated micro system, can realize quality, volume, power consumption of high density photoelectric integration, photoelectric integration platform including III - V compound semiconductor monolithic integrated (INP) passive integration platform, silicate or glass (planar optical waveguide,  PLC) platform and silicon-based platform.  

InP platform is mainly used for the production of laser, modulator, detector and other active devices, low technology level, high substrate cost;  Using PLC platform to produce passive components, low loss, large volume;  The biggest problem with both platforms is that the materials are not compatible with silicon-based electronics.  The most prominent advantage of silicon-based photonic integration is that the process is compatible with CMOS process and the production cost is low, so it is considered to be the most potential optoelectronic and even all-optical integration scheme

There are two integration methods for silicon-based photonic devices and CMOS circuits.

The advantage of the former is that the photonic devices and electronic devices can be optimized separately, but the subsequent packaging is difficult and commercial applications are limited. The latter is difficult to design and process integration of the two devices.  At present, hybrid assembly based on nuclear particle integration is the best choice  


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